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ISL6160
TM
Data Sheet
August 2001
File Number
9028
InfiniBand +12V Bulk and +5V Auxiliary Power Controller
The ISL6160 is designed to address the unique power requirements of the InfiniBand (IB) industry initiative providing independent power control of both the VB(bulk) (+12V) and the VA(auxiliary) (+5V) power rails for a single port. This device can be implemented in both IB Class I (non isolated) and Class II (isolated) Power Topology applications. The ISL6160, along with an N-Channel power MOSFET and a minimal number of passive components provides soft starting ramps of both the VB and VA voltages for an IB module. It also provides accurate and consistent current regulated outputs for a determined period of time before latch-off in the presence of overcurrent (OC) conditions. In addition the ISL6160 provides the enable signal to the on module DC-DC converter either upon module insertion to chassis or from a wake event request. See Figure 1 for typical application usage.
Features
* VB Programmable Overcurrent Protection Regulation Level for 25W and 50W Ports * Internal Charge Pump Allows the Use of an N-Channel MOSFET for VB Control * VB Adjustable Turn-On Ramp * Soft Start Overcurrent Protection During Turn-On * Two Levels of VB Overcurrent Detection and Protection * VA and VB Undervoltage Lock-Outs * 0.125 Integrated Power N-Channel MOSFET VA Switch * Accurate VA Current Sensing and Limiting (1A) * Timed Current Regulation Period (VB Optional) * VA Controlled Turn-On Ramp Time * 1s Response Time to VB Secondary Rail Dead Short
Applications
* InfiniBand VB and VA Voltage Control * -48V and 5V Telecom
Ordering Information
PART NUMBER ISL6160IB ISL6160IB-T ISL6160EVAL2 TEMP. RANGE (oC) -40 to 85 -40 to 85 PACKAGE 14 Ld SOIC Tape & Reel PKG. NO. M14.15 M14.15
Pinout
ISL6160 (14 LEAD SOIC) TOP VIEW
IB Class I Power Topology Evaluation Platform
ISET 1 2 3 4 5 14 VB_ON 13 DC-DC ENABLE 12 CTIM 11 VB_IN 10 VA_FLTn 9 8 VA_OUT NC
VB SECONDARY RAIL TO DC-DC
ISEN GATE
DC-DC EN ISET ISEN GATE VB_ON CTIM
TO DC-DC VBxEN_L
VB_Ret VA_Ret
LOCAL PWR EN VA_IN 6 (OPT.) VA_ENn 7
VA_FLTn VB_IN VB_Ret + VB(ulk) VA_Ret VA_ENn VA_IN VA_Out
(OPT.)
+ VA(ux)
FIGURE 1. TYPICAL APPLICATION USAGE
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Americas Inc. Copyright (c) Intersil Americas Inc. 2001, All Rights Reserved
ISL6160 Simplified Block Diagram
VB +
+ ISET 8V POR QN Q R R S VB_ON
+ UV + VREF ENABLE
ISEN
12V DC-DC EN
20A CLIM OC +
-
7.5K CTIM +
GATE 10A
FALLING EDGE DELAY 18V ENABLE
+ WOCLIM 20A
-
-
+ 1.86V
-
VB_RET
18V
RISING EDGE PULSE
VB_IN
VA_RET
VA_FLTn
Q-PUMP POR VA_IN
VA CURRENT AND TEMP. MONITORING, GATE AND OUTPUT CONTROL LOGIC
VA_OUT
VA_ENn
NC
2
ISL6160 Pin Descriptions
PIN NO. 1 DESIGNATOR ISET FUNCTION Current Set DESCRIPTION Connect to the low side of the current sense resistor through the current limiting set resistor. This pin functions as the current regulation level voltage programming pin. CR Vth = R ISET X 20A Connect to the more positive end of sense resistor to measure the voltage drop across this resistor. Connect to the gate of the external N-Channel MOSFET. A capacitor from this node to ground sets the turn-on ramp. At turn-on this capacitor will be charged to VB +5V by a 10A current source. Bulk voltage ground Auxiliary voltage ground
2
ISEN
Current Sense
3
GATE
External FET Gate Drive Pin
4 5 6
VB_Ret VA_Ret VA_IN
VB Chip Return VA Chip Return
VA_IN provides the chip with +5V bias voltage. At VA < 2.5V, VA control functionality is VA Bias, Controlled disabled, FAULT latch is cleared and floating and VA_OUT is held low. Supply Input, Undervoltage Lock-Out VA enable / disable Connected to VA_Ret through the IB connector, VA is asserted on module when VA_ENn is low. Cycle to reset after latch-off. POR also resets latch.
7
VA_ENn
8 9
NC VA_OUT
NC Controlled Supply Output Over Current Fault Indicator Upon an OC condition VA_OUT is current limited to 1A. Current limit response time is within 200s. VA_Out will remain in current limit for ~10mS before being latched off. Over current fault indicator. VA_FLTn floats and is disabled until VA >2.5V. This output is pulled low after the OC time-out period has expired and stays latched until module is removed. +12V Chip Supply. Connect a capacitor from this pin to ground. This capacitor determines the time delay between an overcurrent event and chip output shutdown (current limit time-out). The duration of current limit time-out (in seconds) = 93k x CTIM (Farads). Indicates that the VB voltage on ISEN pin is within specification and enables the DC-DC converter. DC-DC ENABLE is driven by an open drain N-Channel MOSFET and is pulled low when VB Secondary rail (VISEN) is not within specification. VB_ON is used to control and reset the VB supply to IB module. VB is asserted on, when VB_ON pin is driven high or is open. After a latch-off VB is reset by a low level signal applied to this pin. This input has 20A pull-up capability.
10
VA_ FLTn
11 12
VB_IN CTIM
VB / Chip Supply VB Current Regulation Period
13
DC-DC ENABLE
VB_In Power Good and DC-DC Enable Signal VB Sequencer Enable Control Signal
14
VB_ON
3
ISL6160
Absolute Maximum Ratings
VB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +17.0V GATE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to VB+8V ISEN, PGOOD, VB_On, ISET . . . . . . . . . . . . . . . -0.3V to VB+ 0.3V VA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.0V VA_ENn, VA_FLTn. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 6V VA_OUT. . . . . . . . . . . . . . . . . . . . . . . . . . . . . GND-0.3V to VA+0.3V VA_Output Current . . . . . . . . . . . . . . . . . . . . Short Circuit Protected ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3kV (HBM)
Thermal Information
Thermal Resistance (Typical, Note 1)
JA (oC/W)
SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90 Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . 150oC Maximum Storage Temperature Range . . . . . . . . . . -65oC to 150oC Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . 300oC (SOIC - Lead Tips Only)
Operating Conditions
VB Supply Voltage Range . . . . . . . . . . . . . . . . . . . . . . +10V to +14V VA Supply Voltage Range . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V Temperature Range (TA) . . . . . . . . . . . . . . . . . . . . . . -40oC to 85oC
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. NOTE #1 JA is measured with the component mounted on a low effective thermal conductivity test board in free air. See Tech Brief TB379 for details. 2. All voltages are relative to GND, unless otherwise specified.
Electrical Specifications
PARAMETER
Nominal VB = +12V, VA = +5V, TA = TJ = -40oC - 85oC, Unless Otherwise Specified SYMBOL IISET VISET - VISEN SOC_Vth 25W_ilim_ft 50W_ilim_ft 25W_ilim_lt 50W_ilim_lt Above set current regulation voltage threshold RISET = 2.8k 1%, RSENSE = 20m 1% RISET = 2.8k 1%, RSENSE = 10m 1% RISET = 2.8k 1%, RSENSE = 20m 1%, TJ = 15oC - 45oC RISET = 2.8k 1%, RSENSE = 10m 1%, TJ = 15oC - 45oC VRSENSE = (150mV + CR Vth) to VGATE to 10.8V VGATE to 10.8V VGATE to = 6V Overcurrent Severe Overcurrent GATE Voltage TEST CONDITIONS MIN 18.5 -4 2.2 4.5 2.6 5.2 TYP 20 0 150 2.8 5.6 2.8 5.6 MAX 21.5 4 3.4 6.7 3.0 6.0 UNIT S A mV mV A A A A
+12V (VB) BULK SUPPLY CONTROL ISET Current Source Current Limit Amp Offset Voltage Severe Overcurrent Threshold Full Temp 25W VB Current Regulation Full Temp 50W VB Current Regulation Limited Temp 25W VB Current Regulation Limited Temp 50W VB Current Regulation GATE PARAMETERS GATE Response Time to Severe Overcurrent GATE Response Time to Overcurrent GATE Turn-On Current GATE Pull-Down Current GATE Pull-Down Current GATE High Voltage VB PARAMETERS IC Supply Current VB POR Rising Threshold VB POR Falling Threshold VB POR Threshold Hysteresis DC-DC Enable Undervoltage Threshold VB_On Rising Threshold VB_On Hysteresis VB_On Pull-Up Voltage VB_On Pull-Up Current IVB VBPOR_L2H VBPOR_H2L VBPOR_HYS DCenUV_VTH PWR_Vth PWR_hys PWRN_V PWRN_I VB_On Pin Open VB Low to High VB High to Low VBPOR_L2H - VBPOR_H2L 7.8 7.5 0.1 9.2 1.4 2.7 9 3 8.4 8.1 0.3 9.6 1.7 170 3.2 17 5 9 8.7 0.6 10 2.0 25 mA V V V V V mV V A Tr_gate_soc Tr_gate_oc IGATE Igte_4v_oc Igte_4V_soc Vgate_h 8.4 45 100 600 10 75 0.8 11.6 nS ns A mA A V
VB+4.5V VB+5V
4
ISL6160
Electrical Specifications
PARAMETER CTIM PARAMETERS CTIM Charging Current CTIM Fault Pull-Up Current Current Limit Time-Out Threshold Voltage +5V AUXILIARY SUPPLY CONTROL VA Integrated Switch On Resistance Disabled Output Voltage VOUT Rising Rate Slow VOUT turn-off rate Fast VOUT turn-off rate CURRENT CONTROL Current Limit OC Regulation Settling Time Severe OC Regulation Settling Time Over Current Latch-off Time I/O PARAMETERS Fault Output Voltage ENABLE High Threshold ENABLE Low Threshold ENABLE Input Current BIAS PARAMETERS Enabled VA_Iin Current Disabled VA_Iin Current Undervoltage Lockout Threshold UV Hysteresis Ien_VA Idis_VA VUVLO UVHYS Switches Closed, VA_Out = OPEN, TJ >0oC Switches Open, VA_Out = OPEN VIN Rising, Switch Enabled 1.7 50 120 1 2.25 100 200 5 2.5 A A V mV Vfault_hi Ven_vih Ven_vil Ien_i IOUT = 10mA VIN = 5.5V VIN = 4.5V ENABLE = 0V to 5V, VIN = 5V, TJ > 25oC 2.0 -0.5 0.3 0.8 0.5 V V V A Ilim Tsett_ocr Tsett_socr tOC_loff RL= 5, CL= 0.1F to Within 10% of CR RL< 1, CL= 0.1F to Within 10% of CR 0.75 1 1.5 100 12 1.25 A ms s ms rDS(ON) VOUT_DIS t_vout_rt Toff_svout Toff_fvout VIN = 5V, IOUT = 0.4A, TA = TJ = 25oC TA = TJ = 85oC VIN = 5V, Switch Disabled, No Load RL = 10, CL = 0.1F, 10%-90% RL = 10, CL = 0.1F, 90%-10% RL = 10, CL = 0.1F, 90%-10% 0.125 0.160 300 8 8 4 0.150 0.200 450 mV V/mS V/mS V/uS CTIM_ichg0 CTIM_ichg6 CTIM_Vth VCTIM = 0V VCTIM = 6V CTIM Voltage 16 5 1.3 20 8 1.8 23 11 2.3 A mA V Nominal VB = +12V, VA = +5V, TA = TJ = -40oC - 85oC, Unless Otherwise Specified (Continued) SYMBOL TEST CONDITIONS MIN TYP MAX UNIT S
ISL6160 Description and Operation
The ISL6160 is the first power supply sequencer for the emerging InfiniBand module (IM) hot swap application. This IC controls both the +12V VB(ulk) and +5V VA(ux) supplies providing soft start during hot insertion and overcurrent (OC) protection during operation. For VB control and protection, the ISL6160 features include an accurate current detecting comparator, current limiting for the range of both 25W and 50W capable power ports, a current regulated time delay to latch off and soft start turn-on ramp. These features are all programmable with a minimum of external passive components. The ISL6160 also includes severe overcurrent protection that immediately shuts down the MOSFET switch should there be a shorted IM load. The VB_ON pin provides on-off control of the external VB switch once VB_IN > 9V. Driving this pin high causes the gate pin to charge the external gate capacitor with a 10uA current setting the soft start ramp rate. Large capacitive loads can thus be safely turned on with no inrush current spiking nor disruption of the voltage supply rail.
The VB load current passes through an external current sense resistor. When the voltage across the sense resistor exceeds the user programmed ISET voltage threshold, the controller enters current regulation (CR). The regulated current level is fixed by the RISET and RSENSE resistors. See Table 1 for RISET programming resistor value and the resulting nominal CR threshold voltage.
TABLE 1. NOMINAL REGULATION LEVEL (RSENSE = 0.020) RISET RESISTOR 1.0k 2.8k 3.48k 5.6k NOMINAL OC Vth 20mV 56mV 70mV 112mV CURRENT (A) 1 2.8 3.5 5.6 POWER (W) 12 33.6 42 67.2
NOTE: Nominal Vth = RISET x 20A.
During CR, the CTIM pin starts charging the time-out capacitor with a 20A current source and the controller enters the delay time to latch-off period. This feature allows transient currents that exceed the designed limit to pass without immediately
5
ISL6160
shutting down the VB supply. The length of this period is set by the value of a capacitor between CTIM and VB_RET. See table 2 for CTIM value and resulting l current regulation period.
TABLE 2. CTIM CAPACITOR 0.001F 0.01F 0.022F 0.047F 0.1F NOMINAL CURRENT REGULATION PERIOD 93s 930s 2ms 4.4ms 9.3ms
see Figure 15 and the 12mS time (Figure 16) to latch-off is independent of thermal condition . The ISL6160 VA_ENn pin provides on-off control over the VA_IN supply when VA is greater than 2.5V. The switch is asserted on and starts the soft start ramp once VA_ENn < 0.8V. Once the VA is latched off due to an OC condition the VA_Fltn pin will go low indicating the faulted state to a control chip, indicator display or alarm. The ISL6160 VB and VA control circuitries are isolated from each other, thus there are no sequencing restrictions to be considered.
NOTE: Nominal time-out period in seconds = C TIM x 93k.
The programmed current level is held until either the OC event passes or the time out period expires. If the former is the case then the N-Channel MOSFET is fully enhanced and the CTIM capacitor is discharged. Once CTIM charges to 1.87V, signaling that the time out period has expired an internal latch is set whereby the FET gate is quickly pulled to 0V turning off the NChannel MOSFET switch, isolating the faulty load. Monitor the CTIM pin for an OC latch off indication. This pin will rise rapidly from 1.9V to VB once the time out period expires. If no CTIM capacitor is implemented the VB Secondary Rail will immediately latch-off in an OC event. The ISL6160 responds to a severe overcurrent load (defined as a voltage across the sense resistor >150mV over the CR Vth set point) by immediately, driving the N-Channel MOSFET gate to 0V in ~1s. The controlled gate voltage is then ramped up turning on the N-Channel MOSFET to the programmed current limit level. This is the start of the time out period. The VB control circuitry is reset after an OC latch-off condition by a low level on the VB _ON pin and is turned on again by the VB_ON pin being driven high. The DC-DC_EN pin is used to enable an accompanying DCDC converter on the IM when the VB Secondary Rail is within specification. This pin pulls up to VB through a pull-up resistor when the VISEN is > 10V. This pin can also be used as an undervoltage (UV) signal as it will pull low once the VISEN falls below 9.2V. This signal can also be passed to a system controller chip or used to drive an LED for observation. The state of this signal does not impact the VB current control function. For the VA supply the ISL6160 features fully integrated current monitoring and regulation, an integrated 125m N-channel MOSFET power switch (Figure 13.) and a current limited delay to latch-off for system protection. The current sense and limiting circuitry sets the CR limit to a nominal 1A, making this device well suited for the VA requirements. See Figure 14. for current regulation performance. The ISL6160 provides VA OC fault notification if needed, accurate current regulation and a consistent timed latch-off thus isolating and protecting the voltage bus in the presence of an OC event or short circuit. The OC event to CR time is inversely related to the OC magnitude,
Description of ISL6160 Operation in an InfiniBand Module (IM)
On the IM the ISL6160 is necessarily paired with a DC-DC converter to convert 12V to a lower usable voltage for the application circuitry. Figure 2 shows a block diagram of a complete IM power sequencer and power supply using the ISL6160 and a HIP6006, single output PWM DC-DC converter. Upon insertion, the InfiniBand (IB) backplane secondary side connector sequences connections between the backplane and the inserted module in the following order: 1. VA_Ret and VB_Ret 2. VA_In and VB_In 3. the 6 InfiniBand Module (IM) control signals and 4. VBx_En_L and IMxPRst due to the staggered lead lengths. The ISL6160 VA undervoltage lockout feature prevents turn-on of VA until VA_In > 2.5V. It then enables the VA soft start and power up. The VA rising voltage output is a current limited ramp so that both the inrush current and voltage slew rate are limited, (Figure 18) independent of load. This reduces supply droop due to surge and eliminates the need for additional external EMI filters. During operation, once a VA OC condition is detected the output current is limited to 1A for 12mS to allow transient conditions to pass. If the IC is still in current limit mode after the current limit period has elapsed, the output is then latched off. The VA to the IM circuitry is latched off until reset by the disconnection and reconnection of the IM from the chassis backplane. Once VB_In is connected, it is held off from the VB Secondary Rail until the ISL6160 VB_On pin is signaled high. This is accomplished through the exclusive OR of both the VBx_En_L and the Local_Power_Enable being asserted. At that time the ISL6160 turns on the VB in a soft start mode protecting the primary supply rail from sudden in-rush current. During turn-on, the external gate capacitor of the N-Channel MOSFET (VB switch) is charged with a 20A current source resulting in a programmable ramp (soft start turn-on). An internal charge pump supplies the gate drive for the 12V VB supply switch driving the MOSFET gate to VB +5V. Once the VB Secondary Rail ramps to 10V the DC-DC_En pin is pulled high thus
6
ISL6160
enabling the accompanying voltage converter. The DC-DC converter then provides a well regulated output voltage to the IM circuitry. Available from Intersil is the ISL6160EVAL2. The ISL6160EVAL2 is a complete InfiniBand Class I (non isolated) power topology evaluation platform consisting of the ISL6160 and the HIP6006 single output PWM controller. See Figure 2 for a simplified block diagram of the ISL6160EVAL2 platform. This evaluation platform allows the Infiniband Module (IM) power supply designer to evaluate the concept of this design and apply it to a specific IM power requirement. The evaluation platform is configured for 5V Vout and 3A Iout capability and exhibits a 92% total efficiency. See Figures 19 and 20 for ISL6160EVAL2 turn-on and turn-off waveforms. Additional information for the ISL6160EVAL2 can be found in application note AN9959.
-48V
1 2 3 4 5 6 -48V LOAD +5V 0V + 7
14 13
ISL6160
12 11 10 9 8 + +5V LOAD 12V REG
-
FIGURE 3. -48V/+5V APPLICATION CIRCUIT
Application Considerations
The manufacturers' MOSFET safe operating area (SOA) data should be consulted, as during the soft start ramp and current regulation times, the VGS of the external N-Channel MOSFETs is reduced driving the N-Channel MOSFET switch into the (linear region) high rDS(ON) state. Thus avoid extended soft start and time out periods as the external N-Channel MOSFETs may be damaged or destroyed due to excessive internal power dissipation. Refer to the MOSFET manufacturers' data sheets for SOA information. With the high levels of inrush current e.g., highly capacitive loads and HDD motor start up currents, choosing the ramp up rate and regulation level of the load current is crucial to provide both protection and still allow for this inrush current without latching off. Consider this in addition to the time out delay when choosing MOSFETs for your design. Correct physical layout of RSENSE resistor is critical to the accuracy of sensing the VB current. Ideally trace routing between the RSENSE resistors and the ISL6160 is direct and as short as possible with zero current in the sense lines. (See Figure 4.)
VB_IN
DC-DC_ON VB_ON VB CONTROL VA_IN
EN
HI GATE Vout
ISL6160
VA CONTROL
HIP6006
LO_GATE
LCL_POWER_EN VBX_EN_L
VAout
FIGURE 2. SIMPLIFIED ISL6160EVAL2 BLOCK DIAGRAM
Using the ISL6160 beyond IM Applications -48V, +5V Control Circuit
The ISL6160 can also be used for -48V and +5V telecom power control. The VB portion of the ISL6160 configured as a low side switch controller as shown in Figure 3. is capable of controlling several hundreds of volts, positive or negative and at the same time provide control and protection for the +5V supply with its 1A integrated current regulating function. Biased by an external 12V reference in the low side switch configuration the ISL6160 retains all of its features except for the DC-DC_EN feature. This is nonfunctional in the low side configuration as VISEN is always near 0V and will not pull high to indicate that voltage is good. When controlling a negative voltage the VB_ON control can be implemented through an optocoupler for on-off control or left open for an always on hot pluggable adaptor card application .
CORRECT
INCORRECT
O ISEN AND RISET
CURRENT SENSE RESISTOR
FIGURE 4. SENSE RESISTOR PCB LAYOUT
7
ISL6160 Typical Performance Curves
5.0 4.5 VB BIAS CURRENT (mA) ISET CURRENT (A) 0 10 20 30 40 50 60 70 80 90 100 20.2 20.0 19.8 19.6
4.0 3.5 3.0 2.5 2.0 TEMPERATURE (oC)
19.4 19.2 19.0 0
10
20
30
40
50
60
70
80
90
100
TEMPERATURE (oC)
FIGURE 5. VB BIAS CURRENT
FIGURE 6. ISET SOURCE CURRENT
20.5 CTIM OC VOLTAGE THRESHOLD (V) CTIM = 0V, CURRENT SOURCE (A) 20.32 CTIM - 0V
1.89 1.88 1.87 1.86 1.85 1.84 1.83 0 10 20 30 40 50 60 70 80 90 100 0 10 20 30 40 50 60 70 80 90 100 TEMPERATURE (oC) TEMPERATURE (oC)
20.16 20.0 19.82 19.66 19.5
FIGURE 7. CTIM CURRENT SOURCE
9.67 GATE CHARGE CURRENT (A) 10.2 10.1 10.0 9.9 9.8 9.7 9.6 0 10 20 30 40 50 60 70 80 90 100 0
FIGURE 8. CTIM OC VOLTAGE THRESHOLD
VB UV THRESHOLD (V)
9.66
9.65 TEMPERATURE (oC)
10
20
30
40
50
60
70
80
90
100
TEMPERATURE (oC)
FIGURE 9. VB UV THRESHOLD
FIGURE 10. GATE CHARGE CURRENT
8
ISL6160 Typical Performance Curves
17.200 17.183 17.166 17.150 17.133 17.116 17.100 0 10 20 30 40 50 60 70 80 90 100 TEMPERATURE (oC) VB POWER ON RESET (V) GATE DRIVE (V)
(Continued)
8.5 VB LO TO HI 8.4
8.3
8.2
8.1
VB HI TO LO
8.0 0 10 20 30 40 50 60 70 80 90 100 TEMPERATURE (oC)
FIGURE 11. GATE DRIVE VOLTAGE, VB = 12V
FIGURE 12. VB POWER ON RESET VOLTAGE THRESHOLD
260 VA CURRENT REGULATED IOUT (mA) SWITCH ON RESISTANCE (m) 240 220 200 180 160 140 120 100
1200 -40 oC 1100 25oC 1000
85oC 900
0
10
20
30
40
50
60
70
80
90
100
800
1.3 1.5
2.0
2.5
3.0
3.5
4.0
4.5 4.8
TEMPERATURE (oC)
VA OUT (V)
FIGURE 13. VA = 5V SWITCH ON RESISTANCE AT 0.4A
FIGURE 14. VA CURRENT REGULATION vs. VA OUT
1.6 TIME TO CURRENT REGULATION (ms) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 1 2 3 4 5 6 7 8 9 10 VOUT (1V/DIV.) TIME (2ms /DIV.) 12MS VA LATCH OFF DELAY VA OUT FLTN
FAULT CURRENT (A)
FIGURE 15. CR SETTLING TIME vs. VA IOUT
FIGURE 16. -VA TURN-ON INTO 1.5A FAULT
9
ISL6160 Typical Performance Curves
(Continued)
VB_ON 5V/DIV. VGATE 5V/DIV.
VB VOUT 5V/DIV.
VA_In 1V/DIV. VA VOUT 1V/DIV.
DCenUV_VTH, 9.8V
VA IOUT 0.1A/DIV.
VB IOUT 2A/DIV.
DC-DC_EN 5V/DIV
20ms/DIV.
1ms/DIV. FIGURE 18. VA HOT SWAP TURN-ON
FIGURE 17. VB TURN-ON Cload = 680F
LCL_PWR_EN (TP6) VGATE (TP4)
LCL_PWR_EN (TP6)
VB SECONDARY RAIL (TP1) VGATE (TP4)
VB SECONDARY RAIL (TP1)
DC-DC_EN (TP2) Vout (TP3)
DC-DC_EN (TP2) Vout (TP3) Iout 2A / DIV
5V / DIV 20ms / DIV FIGURE 19. ISL6160EVAL2 Vout TURN-ON
5V / DIV
2ms / DIV
FIGURE 20. ISL6160EVAL2 Vout TURN-OFF
10
ISL6160 Small Outline Plastic Packages (SOIC)
N INDEX AREA E -B1 2 3 SEATING PLANE -AD -CA h x 45o H 0.25(0.010) M BM
M14.15 (JEDEC MS-012-AB ISSUE C) 14 LEAD NARROW BODY SMALL OUTLINE PLASTIC PACKAGE
INCHES SYMBOL A MIN 0.0532 0.0040 0.013 0.0075 0.3367 0.1497 MAX 0.0688 0.0098 0.020 0.0098 0.3444 0.1574 MILLIMETERS MIN 1.35 0.10 0.33 0.19 8.55 3.80 MAX 1.75 0.25 0.51 0.25 8.75 4.00 NOTES 9 3 4 5 6 7 8o Rev. 0 12/93
L
A1 B C D E

A1 0.10(0.004) C
e
B 0.25(0.010) M C AM BS
e H h L N
0.050 BSC 0.2284 0.0099 0.016 14 0o 8o 0.2440 0.0196 0.050
1.27 BSC 5.80 0.25 0.40 14 0o 6.20 0.50 1.27
NOTES: 1. Symbols are defined in the "MO Series Symbol List" in Section 2.2 of Publication Number 95. 2. Dimensioning and tolerancing per ANSI Y14.5M-1982. 3. Dimension "D" does not include mold flash, protrusions or gate burrs. Mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006 inch) per side. 4. Dimension "E" does not include interlead flash or protrusions. Interlead flash and protrusions shall not exceed 0.25mm (0.010 inch) per side. 5. The chamfer on the body is optional. If it is not present, a visual index feature must be located within the crosshatched area. 6. "L" is the length of terminal for soldering to a substrate. 7. "N" is the number of terminal positions. 8. Terminal numbers are shown for reference only. 9. The lead width "B", as measured 0.36mm (0.014 inch) or greater above the seating plane, shall not exceed a maximum value of 0.61mm (0.024 inch). 10. Controlling dimension: MILLIMETER. Converted inch dimensions are not necessarily exact.
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Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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